標題: Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : H
作者: Chen, YA
Wu, YH
Tsay, WC
Laih, LH
Hong, JW
Chang, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 9-七月-1998
摘要: To improve the electroluminescence (EL) properties of the nSiC:H-based pin thin film light-emitting diodes (TFLEDs) with the promotion of hole injection efficiency, a thin Mo metal film was used as a buffer layer to prevent reactions between the ITO (indium-tin-oxide) electrode and the p(+)-a-Si:H layer. With the formation of semi-transparent Mo silicide after annealing, a lower EL threshold voltage and a significantly higher brightness for a finished TFLED were achieved. The brightness of the obtained device was 1300cd/m(2) at an injection current density of 600mA/cm(2), and its EL threshold voltage was 14V.
URI: http://hdl.handle.net/11536/32507
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 34
Issue: 14
起始頁: 1433
結束頁: 1434
顯示於類別:期刊論文


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