完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wang, MT | en_US |
dc.contributor.author | Wang, PC | en_US |
dc.contributor.author | Chuang, MC | en_US |
dc.contributor.author | Chen, LJ | en_US |
dc.contributor.author | Chen, MC | en_US |
dc.date.accessioned | 2014-12-08T15:48:55Z | - |
dc.date.available | 2014-12-08T15:48:55Z | - |
dc.date.issued | 1998-07-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32536 | - |
dc.description.abstract | This work investigates the thermal stability of Al/W/p(+)-n junction diodes, in which the W contact was filled using selective chemical vapor deposition to a thickness of about 450 nm and served as diffusion barrier between the Al and the Si substrate. The effects of in situ N-2 plasma treatment on the barrier effectiveness were also investigated. The Al/W(450 nm)/p(+)-n junction diodes can sustain a 30 min furnace annealing up to 575 degrees C. With an in situ N-2 plasma treatment on the W surface caused a thin layer of WNx to form on the W surface, and the nitrified layer of WNx/W acting as barrier between the AZ and the Si substrate effectively suppressed WAl12 formation at elevated temperatures, resulting in a significant barrier improvement. N2 plasma treatment at 100 W for 300 s enabled the Al/WNx/W(450 nm)lp(+)-n junction diodes to sustain thermal annealing at temperatures up to 625 degrees C without degradation of electrical characteristics. (C) 1998 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Thermal stability of selective chemical vapor deposited tungsten contact and effects of in situ N-2 plasma treatment | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 16 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 2026 | en_US |
dc.citation.epage | 2033 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000075381400043 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |