標題: Internal quantum efficiency behavior of a-plane and c-plane InGaN/GaN multiple quantum well with different indium compositions
作者: Wang, Te-Chung
Ko, Tsung-Shine
Lu, Tien-Chang
Kuo, Hao-Chung
Gao, Run-Ci
Tsay, Jenq-Dar
Wang, Sing-Chung
光電工程學系
Department of Photonics
公開日期: 2008
摘要: We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium, compositions, we concluded that without piezoelectric field, high indium. content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a-plane InGaN/GaN MQW while the indium. composition about 30% so that the photoluminescence intensity of the sample 810 degrees C low down and spectrum bandwidth broaden.
URI: http://hdl.handle.net/11536/32586
http://dx.doi.org/10.1002/pssc.200778503
ISSN: 1610-1634
DOI: 10.1002/pssc.200778503
期刊: PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6
Volume: 5
Issue: 6
起始頁: 2161
結束頁: 2163
Appears in Collections:Conferences Paper


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