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dc.contributor.authorPan, JSen_US
dc.contributor.authorCheng, PHen_US
dc.contributor.authorLee, TDen_US
dc.contributor.authorLai, YCen_US
dc.contributor.authorTai, KCen_US
dc.date.accessioned2014-12-08T15:49:03Z-
dc.date.available2014-12-08T15:49:03Z-
dc.date.issued1998-06-01en_US
dc.identifier.issnen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.37.L643en_US
dc.identifier.urihttp://hdl.handle.net/11536/32599-
dc.description.abstractVisible emitting microdisk lasers with single InGaP/InGaAlP quantum well were demonstrated for the first time. Large spontaneous emission factors beta of 0.12 and 0.08 were observed for 5 and 10 mu m diameter disks, respectively.en_US
dc.language.isoen_USen_US
dc.subjectmicrodisk lasersen_US
dc.title0.66 mu m InGaP/InGaAlP single quantum well microdisk lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.37.L643en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume37en_US
dc.citation.issue6Aen_US
dc.citation.spageL643en_US
dc.citation.epageL645en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000074941400006-
dc.citation.woscount2-
Appears in Collections:Articles


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