標題: Conduction mechanisms in amorphous and crystalline Ta2O5 thin films
作者: Ezhilvalavan, S
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1998
摘要: Electrical properties and leakage current mechanisms of amorphous and polycrystalline tantalum pentoxide (Ta2O5) films were studied. Ta2O5 thin films were deposited on Pt/SiO2/n-Si substrate by reactive magnetron sputtering and then annealed at temperatures ranging from 500 to 800 degrees C for 30 min in O-2. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric constant of about 31 and leakage current density of 10(-10) A/cm(2) at 100 kV/cm. The leakage current flowing through Ta2O5 film increases from 10(-10) to 10(-7) A/cm(2) following the annealing. The conduction mechanism at low electric fields (100 kV/cm) is due to Ohmic conduction. On the other hand Schottky mechanism dominates at the intermediate fields (100-350 kV/cm) and Poole-Frenkel becomes predominant at high fields (>350 kV/cm). The increase in leakage current density in the crystallized film is due to Si penetrated into the Ta2O5 grain and grain boundary from the underlying SiO2/n-Si substrate. (C) 1998 American Institute of Physics.
URI: http://hdl.handle.net/11536/32630
ISSN: 0021-8979
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 83
Issue: 9
起始頁: 4797
結束頁: 4801
顯示於類別:期刊論文