統計資料
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| Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy | 113 |
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| 七月 2024 | 八月 2024 | 九月 2024 | 十月 2024 | 十一月 2024 | 十二月 2024 | 一月 2025 | |
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| Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy | 0 | 0 | 0 | 0 | 1 | 5 | 0 |
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| 000073710800030.pdf | 6 |
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