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| Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy | 116 |
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| Formation of two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be doped GaAs with varying periods grown by low-temperature molecular beam epitaxy | 0 | 1 | 0 | 1 | 0 | 1 | 0 |
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