Optical properties of Zn1-xMnxSe epilayers grown by molecular beam epitaxy

Abstract

Zn1-xMnxSe (x less than or equal to 0.78) epilayers were grown on the GaAs (001) substrate with tilt angle 0, 3, 10, and 15 degrees toward [010] by the molecular beam epitaxy. The reflectivity, transmission, and photoluminescence experiments were used to measure the energy gap of the epilayers. A red shift of 4 meV was found as the substrate tilt angle increased from 0 to 15 degrees. The red shift in band gap energy is attributed to the increasing incoporation of smaller Zn ion with the increase in the kink density which results from the increase in the substrate tilt angle. In addition, the lattice vibration of the Zn1-xMnxSe (0 less than or equal to x less than or equal to 0.78) epilayers measured by the Raman scattering was found to follow the intermediate mode behavior of type Ib instead of type Ic. The force constants F-MnSe = 2.81 x 10(6) amu.cm(-2) and F-ZnSe = 3.96 x 10(6) amu.cm(-2) were obtained.