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dc.contributor.authorWu, CYen_US
dc.contributor.authorYao, YDen_US
dc.contributor.authorLin, JJen_US
dc.date.accessioned2014-12-08T15:49:12Z-
dc.date.available2014-12-08T15:49:12Z-
dc.date.issued1998-04-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/32692-
dc.description.abstractThe weak-localization effect is very sensitive to the presence of magnetic moments. We use it to study the formation of localized moments in thin Ni layers under a 100 Cu film. The Ni thickness varies between 0 and 4 Angstrom. We measured the magnetoresistance (MR) of these samples at temperatures ranging from 0.4 to 21 K. The magnetic field with the strength of up to 1 T, was applied normal to the film surface. We find that MR is more positive In samples with Ni underlayer than in Cu film. Comparing our results with the prediction of weak localization theory, the magnetic moment is detected only in Ni underlayers thicker than 2 Angstrom.en_US
dc.language.isoen_USen_US
dc.titleMagnetoresistance behavior of Ni layer under Cu filmen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume36en_US
dc.citation.issue2en_US
dc.citation.spage444en_US
dc.citation.epage448en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000073410300048-
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