完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Wu, CY | en_US |
dc.contributor.author | Yao, YD | en_US |
dc.contributor.author | Lin, JJ | en_US |
dc.date.accessioned | 2014-12-08T15:49:12Z | - |
dc.date.available | 2014-12-08T15:49:12Z | - |
dc.date.issued | 1998-04-01 | en_US |
dc.identifier.issn | 0577-9073 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32692 | - |
dc.description.abstract | The weak-localization effect is very sensitive to the presence of magnetic moments. We use it to study the formation of localized moments in thin Ni layers under a 100 Cu film. The Ni thickness varies between 0 and 4 Angstrom. We measured the magnetoresistance (MR) of these samples at temperatures ranging from 0.4 to 21 K. The magnetic field with the strength of up to 1 T, was applied normal to the film surface. We find that MR is more positive In samples with Ni underlayer than in Cu film. Comparing our results with the prediction of weak localization theory, the magnetic moment is detected only in Ni underlayers thicker than 2 Angstrom. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Magnetoresistance behavior of Ni layer under Cu film | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.journal | CHINESE JOURNAL OF PHYSICS | en_US |
dc.citation.volume | 36 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 444 | en_US |
dc.citation.epage | 448 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000073410300048 | - |
顯示於類別: | 會議論文 |