標題: A novel fabrication technique of T-shaped gates using an EGMEA and PMIPK multilayer resist system and a single-step electron-beam exposure
作者: Lai, YL
Lai, YK
Chang, CY
Chang, EY
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1998
摘要: A novel fabrication process of submicron T-shaped gates using an EGMEA and PMIPK multi-layer resist system and e-beam lithography has been developed. Due to the different sensitivities of the EGMEA and PMIPK resists, narrow/wide/narrow resist opening was obtained. The status of the electron scattering and the incident primary electron beams statistically construct the absorbed energy density distribution contours. The absorbed energy density distribution contours in association with the sensitivity feature of the resists and the appropriate development conditions determine the final resist profile. Only a single exposure step and a single development step are required. The simplified fabrication process of T-shaped gates significantly reduces not only the process time but also the production costs. The simple submicron T-shaped gate fabrication process studied provides a suitable technique for the mass manufacture of the advanced InP-based and GaAs-based microwave devices and circuits.
URI: http://hdl.handle.net/11536/32771
ISSN: 0167-9317
期刊: MICROELECTRONIC ENGINEERING
Volume: 42
Issue: 
起始頁: 555
結束頁: 558
顯示於類別:會議論文


文件中的檔案:

  1. 000073284600130.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。