Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

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DC Field	Value	Language
dc.contributor.author	Jong, FC	en_US
dc.contributor.author	Huang, TY	en_US
dc.contributor.author	Chao, TS	en_US
dc.contributor.author	Lin, HC	en_US
dc.contributor.author	Wang, MF	en_US
dc.contributor.author	Chang, CY	en_US
dc.date.accessioned	2014-12-08T15:49:20Z	-
dc.date.available	2014-12-08T15:49:20Z	-
dc.date.issued	1998-02-19	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32789	-
dc.description.abstract	The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.	en_US
dc.language.iso	en_US	en_US
dc.title	Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	4	en_US
dc.citation.spage	404	en_US
dc.citation.epage	406	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000072232900062	-
dc.citation.woscount	0	-
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