Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs

標題:	Effects of N2O-annealed sacrificial oxide on the short-channel effects of nMOSFETs
作者:	Jong, FC Huang, TY Chao, TS Lin, HC Wang, MF Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	19-Feb-1998
摘要:	The authors report the effects of N2O-annealed sacrificial oxide on nMOSFETs. It is demonstrated that by adding an N2O-annealing step to the sacrificial. oxide which was stripped off before growing the final gate oxide, the reverse short-channel effects (RSCE) can still be effectively suppressed.
URI:	http://hdl.handle.net/11536/32789
ISSN:	0013-5194
期刊:	ELECTRONICS LETTERS
Volume:	34
Issue:	4
起始頁:	404
結束頁:	406
Appears in Collections:	Articles

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