標題: | Highly oriented (Zr0.7Sn0.3)TiO4 thin films grown by rf magnetron sputtering |
作者: | Wu, FJ Tseng, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Feb-1998 |
摘要: | Thin films of (Zr0.7Sn0.3)TiO4 on Si(100) were prepared by rf magnetron sputtering in the present study. Films of a highly preferred [020] orientation, as demonstrated by X-ray diffraction and transmission electron microscopic examinations, were grown successfully on a Si substrate with in situ postannealing at 700 degrees C. The chemical composition of the films, measured by secondary ion mass spectroscopy, exhibited a uniform concentration distribution for all species. A study by X-ray photoelectron spectroscopy further revealed some firm evidence of a molecular orbital that affected the chemical structure. The dielectric constants of 400-nm-thick (Zr0.7Sn0.3)TiO4 films in the present study were >18 for the films with a preferred orientation and similar to 11 for polycrystalline films. |
URI: | http://hdl.handle.net/11536/32804 |
ISSN: | 0002-7820 |
期刊: | JOURNAL OF THE AMERICAN CERAMIC SOCIETY |
Volume: | 81 |
Issue: | 2 |
起始頁: | 439 |
結束頁: | 443 |
Appears in Collections: | Articles |
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