Fabrication of intermediate mask for deep x-ray lithography

Abstract

This paper presents the fabrication of intermediate x-ray mask for deep x-ray lithography. In order to have working mask with absorbers thickness larger than 10 mu m, the intermediate mask should have absorbers of 0.7 mu m in thickness. To demonstrate intermediate mask fabrication, x-ray zone plates are fabricated on the 1.2 mu m low-stress silicon-rich silicon nitride (SiNx) membrane with the tri-layer Chromium-Tungsten-Chromium (Cr-W-Cr) as the x-ray absorbers. The chromium layers both 200 angstroms are used as adhesion and for stress relief. The SiNx film is deposited with low pressure chemical vapor deposition (LPCVD) and the free standing membrane are formed by KOH silicon backside etching. With the e-beam Lithography and reactive ion etching, width of 0.8 mu m of outmost zone of the x-ray zone plates has been achieved on the membrane, The scanning electron microscopy (SEM) images of the x-ray zone plates and pictures of intermediate masks are demonstrated.