標題: INFLUENCE OF THIN PROTECTIVE INAS LAYERS ON THE OPTICAL-QUALITY OF ALGAAS AND QUANTUM-WELLS
作者: TSAI, KL
CHANG, KH
LEE, CP
HUANG, KF
CHANG, Y
FAN, JC
LIU, DG
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-Sep-1992
摘要: Influence of a thin protective but subsequently evaporated InAs layer on the regrowth of AlGaAs has been studied. It was found tha although most of the InAs could be evaporated by thermal desorption, some would react with Al0.36Ga0.64As to form InAlGaAs. These InAlGaAs islands act as potential wells for carrier recombination and dominate the photoluminescence spectrum. Transmission electron microscopy photographs show that dislocations are formed near the islands. These defects are caused by lattice mismatch between AlGaAs and InAlGaAs. These islands and defects strongly affect the optical quality of surrounding Al0.36Ga0.64As and quantum wells.
URI: http://dx.doi.org/10.1063/1.351590
http://hdl.handle.net/11536/3288
ISSN: 0021-8979
DOI: 10.1063/1.351590
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 72
Issue: 6
起始頁: 2449
結束頁: 2452
Appears in Collections:Articles