Investigation of silicon oxide films prepared by room-temperature ion plating

Abstract

To develop excellent silicon oxide film using low temperature method, ion plating (IP) oxide is investigated. Physicochemical characterizations of the IP oxide are studied using ellipsometry, Fourier transform infrared spectrometry, and P-etch rate measurement. The IP oxide is a high-density dielectric with strained bonds. Electrical characterizations are also analyzed using capacitance-voltage and current-voltage techniques through metal-oxide-semiconductor capacitors. The IP oxide has a low leakage current, a high breakdown field, and low interface state density. In addition, IP oxide annealed in N-2 ambient is also studied. After high-temperature annealing, the characteristics of IP oxide become comparable to those of thermal oxide. The novel oxide him is successfully applied as a gate insulator to low-temperature processed (less than or equal to 620 degrees C) polysilicon thin-film transistors. (C) 1998 American Institute of Physics.