Title: 室溫液相沉積氧化矽(SiO2-xFx)薄膜之研究與應用
Investigation and Application of Room-Temperature Liquid- Phase Deposited Silicon Oxide (SiO2-xFx)
Authors: 陳俊麟
Chun-Lin Chen
葉清發
Ching-Fa Yeh
電子研究所
Keywords: 氧化矽;液相沉積法.;Silicon Oxide; Liquid Phase Deposition.
Issue Date: 1994
Abstract: 本論文主要開發室溫下以液相沉積法成長含氟之氧化矽的最新技術,本方
法只需在六氟矽酸與二氧化矽所形成的浸泡溶液中加入適當量的水即可於
基板上沉積含氟之二氧化矽,我們首度提出一個合理的機制來解釋使用本
方法成長氟氧化矽薄膜之原理。我們發現在反應溶液中所加入之水量多寡
可以控制氧化矽薄膜之沉積速率。藉由霍氏轉換紅外線光譜(FTIR)與歐傑
電子光譜(AES)之分析,確知由此方法所沉積之氧化矽薄膜中可自然地含
有氟元素,而且是以Si-F之形式存在。
In this thesis, we developed a novel technology for fluorinated
silicon oxide (SiO2-xFx) by using room-temperature liquid-phase
deposition method. LPD-oxide can be obtained by adding H2O to
the immersing solution which was prepared by dissolving silica
in hydrofluorosilicic acid (H2SiF6). We invstigated the growth
mechanism of LPD oxide, and first proposed a model for the LPD
mechanism that could satisfactorily explain all of the
experimental phenomena. We found that the deposition rate could
be controlled by varying the quantity of H2O added. The LPD-
oxide is lightly oxygen-deficient. FTIR spectra and AES depth
profile indicate that a small amount of fluorine was naturally
incorporated into the oxide. The composition of LPD-oxide can
be represented as SiO2-xFx. We also studied the basic
characteristics of LPD-oxide, including the activation energy,
the physical/chemical properties, and the electrical properties
of the film.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT830430031
http://hdl.handle.net/11536/59216
Appears in Collections:Thesis