室溫液相沉積氧化矽(SiO2-xFx)薄膜之研究與應用

Abstract

本論文主要開發室溫下以液相沉積法成長含氟之氧化矽的最新技術，本方 法只需在六氟矽酸與二氧化矽所形成的浸泡溶液中加入適當量的水即可於 基板上沉積含氟之二氧化矽，我們首度提出一個合理的機制來解釋使用本 方法成長氟氧化矽薄膜之原理。我們發現在反應溶液中所加入之水量多寡 可以控制氧化矽薄膜之沉積速率。藉由霍氏轉換紅外線光譜(FTIR)與歐傑 電子光譜(AES)之分析，確知由此方法所沉積之氧化矽薄膜中可自然地含 有氟元素，而且是以Si-F之形式存在。 In this thesis, we developed a novel technology for fluorinated silicon oxide (SiO2-xFx) by using room-temperature liquid-phase deposition method. LPD-oxide can be obtained by adding H2O to the immersing solution which was prepared by dissolving silica in hydrofluorosilicic acid (H2SiF6). We invstigated the growth mechanism of LPD oxide, and first proposed a model for the LPD mechanism that could satisfactorily explain all of the experimental phenomena. We found that the deposition rate could be controlled by varying the quantity of H2O added. The LPD- oxide is lightly oxygen-deficient. FTIR spectra and AES depth profile indicate that a small amount of fluorine was naturally incorporated into the oxide. The composition of LPD-oxide can be represented as SiO2-xFx. We also studied the basic characteristics of LPD-oxide, including the activation energy, the physical/chemical properties, and the electrical properties of the film.