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dc.contributor.authorCHEN, CCen_US
dc.contributor.authorYU, JLen_US
dc.contributor.authorLEE, CYen_US
dc.contributor.authorLIU, CSen_US
dc.contributor.authorCHIU, HTen_US
dc.date.accessioned2014-12-08T15:04:48Z-
dc.date.available2014-12-08T15:04:48Z-
dc.date.issued1992-09-01en_US
dc.identifier.issn0959-9428en_US
dc.identifier.urihttp://hdl.handle.net/11536/3309-
dc.description.abstractA new method for preparing thin films of titanium silicide, TiSi2, by chemical vapour deposition of difluorosilylene and titanium tetrachloride is reported.en_US
dc.language.isoen_USen_US
dc.subjectCHEMICAL VAPOR DEPOSITIONen_US
dc.subjectTITANIUM SILICIDEen_US
dc.subjectTHIN FILMen_US
dc.titleDIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDEen_US
dc.typeNoteen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRYen_US
dc.citation.volume2en_US
dc.citation.issue9en_US
dc.citation.spage983en_US
dc.citation.epage984en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1992JN40600015-
dc.citation.woscount3-
Appears in Collections:Articles


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