DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHEN, CC	en_US
dc.contributor.author	YU, JL	en_US
dc.contributor.author	LEE, CY	en_US
dc.contributor.author	LIU, CS	en_US
dc.contributor.author	CHIU, HT	en_US
dc.date.accessioned	2014-12-08T15:04:48Z	-
dc.date.available	2014-12-08T15:04:48Z	-
dc.date.issued	1992-09-01	en_US
dc.identifier.issn	0959-9428	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3309	-
dc.description.abstract	A new method for preparing thin films of titanium silicide, TiSi2, by chemical vapour deposition of difluorosilylene and titanium tetrachloride is reported.	en_US
dc.language.iso	en_US	en_US
dc.subject	CHEMICAL VAPOR DEPOSITION	en_US
dc.subject	TITANIUM SILICIDE	en_US
dc.subject	THIN FILM	en_US
dc.title	DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE	en_US
dc.type	Note	en_US
dc.identifier.journal	JOURNAL OF MATERIALS CHEMISTRY	en_US
dc.citation.volume	2	en_US
dc.citation.issue	9	en_US
dc.citation.spage	983	en_US
dc.citation.epage	984	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:A1992JN40600015	-
dc.citation.woscount	3	-
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