DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM 1,1-DIMETHYL-1-SILACYCLOBUTANE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHIU, HT	en_US
dc.contributor.author	LEE, SF	en_US
dc.date.accessioned	2014-12-08T15:04:49Z	-
dc.date.available	2014-12-08T15:04:49Z	-
dc.date.issued	1992-08-01	en_US
dc.identifier.issn	0009-4536	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3328	-
dc.description.abstract	1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline beta-SiC thin films were grown at temperatures 1100 and 1200-degrees-C. At temperatures between 950 and 1100-degrees-C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).	en_US
dc.language.iso	en_US	en_US
dc.subject	LOW-PRESSURE CHEMICAL VAPOR DEPOSITION	en_US
dc.subject	1,1-DIMETHYL-1-SILACYCLOBUTANE	en_US
dc.subject	SILICON CARBIDE THIN FILMS	en_US
dc.title	DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM 1,1-DIMETHYL-1-SILACYCLOBUTANE	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE CHINESE CHEMICAL SOCIETY	en_US
dc.citation.volume	39	en_US
dc.citation.issue	4	en_US
dc.citation.spage	293	en_US
dc.citation.epage	297	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:A1992JK51500003	-
dc.citation.woscount	4	-
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