NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTS

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DC Field	Value	Language
dc.contributor.author	CHANG, SJ	en_US
dc.contributor.author	LEE, CP	en_US
dc.date.accessioned	2014-12-08T15:04:50Z	-
dc.date.available	2014-12-08T15:04:50Z	-
dc.date.issued	1992-08-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.192783	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3342	-
dc.description.abstract	Two-dimensional simulation of the sidegating effect in GaAs MESFET's has been performed. The result confirms that Schottky contacts on semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFET's. The competition between the currents or biases of the contacts is found to be the cause of the S-type negative differential conductivity (S-NDC) or hysteresis observed when measuring the sidegating threshold.	en_US
dc.language.iso	en_US	en_US
dc.title	NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.192783	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	13	en_US
dc.citation.issue	8	en_US
dc.citation.spage	436	en_US
dc.citation.epage	438	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1992JE79400016	-
dc.citation.woscount	5	-
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