完整後設資料紀錄
DC 欄位語言
dc.contributor.authorJUANG, MHen_US
dc.contributor.authorCHENG, HCen_US
dc.date.accessioned2014-12-08T15:04:50Z-
dc.date.available2014-12-08T15:04:50Z-
dc.date.issued1992-07-30en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://hdl.handle.net/11536/3349-
dc.description.abstractEffects of deposited cobalt film thickness on the epitaxial growth of CoSi2 on Si(111) by the solid phase epitaxy regime have been studied using transmission electron microscopy. Thinner films (30 angstrom) facilitate the growth of epitaxial CoSi2, the formation of smooth silicide-Si interfaces and even the growth of single-crystal CoSi2 at low annealing temperatures, but degrade in thermal stability. Thicker films (300 angstrom) retard the grain realignment, and yield faceted epitaxial structure after high temperature annealing. Hence, film thicknesses sufficient to benefit from easy epitaxial growth and forming flat silicide-Si interfaces and yet are thermally stable should be used. Accordingly, a facet-free, thermally stable, single-crystal CoSi2 structure has been achieved using 100 angstrom thick films.en_US
dc.language.isoen_USen_US
dc.titleFILM THICKNESS EFFECT ON THE EPITAXIAL-GROWTH OF COSI2 ON SI(111)en_US
dc.typeArticleen_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume215en_US
dc.citation.issue1en_US
dc.citation.spage71en_US
dc.citation.epage75en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1992JF60300012-
dc.citation.woscount1-
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