CMOS low-noise amplifier with shunt-peaking load for group 1 similar to 3 MB-OFDM ultra-wideband wireless receiver

Abstract

In this paper, a CMOS low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaking load and an output buffer for measurement purpose. It was fabricated in UMC 0.18um standard RF CMOS process. The LNA provides 14.1dB maximum power gain between 2.3GHz-8.0GH while consuming 18.6mW (including buffer) through a 1.8V supply. Over the 3.1GHz-8.0GHz frequency band, a minimum noise figure is 2.0dB. The input return loss is lower than - 7.1dB in the entire bandwidth has also been achieved.