標題: | NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETS |
作者: | LO, SH LEE, CP 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-七月-1992 |
摘要: | The photoeffects on the I-V characteristics of GaAs MESFET's have been studied by a two-dimensional numerical method. It is theoretically verified that the photovoltaic effect occurring at the channel/substrate interface is responsible for the substantial increase of the drain current. The reverse gate current due to illumination is caused by sweep-out by the high electrical field in the gate depletion region, where a large gradient in the depth profile of the hole Fermi energy is found. For devices with a lightly doped n-type buffer layer, the increase of the drain current is less than for devices without a buffer layer, but is still substantial. |
URI: | http://dx.doi.org/10.1109/16.141220 http://hdl.handle.net/11536/3361 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.141220 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 39 |
Issue: | 7 |
起始頁: | 1564 |
結束頁: | 1570 |
顯示於類別: | 期刊論文 |