GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES

doi:10.1109/55.192760

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HONG, JW	en_US
dc.contributor.author	SHIN, NF	en_US
dc.contributor.author	JEN, TS	en_US
dc.contributor.author	NING, SL	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:04:51Z	-
dc.date.available	2014-12-08T15:04:51Z	-
dc.date.issued	1992-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.192760	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3373	-
dc.description.abstract	In order to improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's), a p-i-n TFLED with a graded p-i junction has been proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement was attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.	en_US
dc.language.iso	en_US	en_US
dc.title	GRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.192760	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	13	en_US
dc.citation.issue	7	en_US
dc.citation.spage	375	en_US
dc.citation.epage	377	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1992JA54500007	-
dc.citation.woscount	27	-
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