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dc.contributor.authorHONG, JWen_US
dc.contributor.authorSHIN, NFen_US
dc.contributor.authorJEN, TSen_US
dc.contributor.authorNING, SLen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:04:51Z-
dc.date.available2014-12-08T15:04:51Z-
dc.date.issued1992-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.192760en_US
dc.identifier.urihttp://hdl.handle.net/11536/3373-
dc.description.abstractIn order to improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLED's), a p-i-n TFLED with a graded p-i junction has been proposed and fabricated. The electroluminescence (EL) intensity of the proposed TFLED was more than 100 times higher than that of the basic p-i-n TFLED and about 35 times lower than that of the conventional green LED, at the same injection current density. This significant improvement was attributed to the better interface property and enhancement of hole injection efficiency by using the graded-gap p-i junction.en_US
dc.language.isoen_USen_US
dc.titleGRADED-GAP A-SIC-H P-I-N THIN-FILM LIGHT-EMITTING-DIODESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.192760en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume13en_US
dc.citation.issue7en_US
dc.citation.spage375en_US
dc.citation.epage377en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1992JA54500007-
dc.citation.woscount27-
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