標題: DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPY
作者: LIU, DG
FAN, JC
LEE, CP
TSAI, CM
CHANG, KH
LIOU, DC
LEE, TL
CHEN, LJ
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 25-May-1992
摘要: Direct observation of the Si delta-doped layer in GaAs has been achieved by high resolution transmission electron microscopy. Samples with different Si doses, from half a monolayer to two monolayers, were studied. The observed spreading of the delta-doped layer showed that Si atoms are largely confined in five monolayers at most (in the highest dose case), indicating excellent confinements of dopants in GaAs. From the images, the Si atoms were uniformly distributed in the doped layer, no cluster formation was observed. For delta-doped GaAs grown at low temperature (480-degrees-C), stacking faults originated from the doped layers were observed. These faults were thought to be caused by the large unrelaxed strain in the low-temperature grown GaAs.
URI: http://dx.doi.org/10.1063/1.106902
http://hdl.handle.net/11536/3415
ISSN: 0003-6951
DOI: 10.1063/1.106902
期刊: APPLIED PHYSICS LETTERS
Volume: 60
Issue: 21
起始頁: 2628
結束頁: 2630
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