标题: | EFFECTS OF RAPID THERMAL ANNEALING ON THE FORMATION OF SHALLOW P+N JUNCTION BY IMPLANTING BF2+ IONS INTO THIN METAL-FILMS ON SI SUBSTRATE .1. THIN TITANIUM FILMS |
作者: | JUANG, MH CHENG, HC 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 1-二月-1992 |
摘要: | High-quality Ti-silicided shallow p+ n junctions have been fabricated by implanting BF2+ ions into thin Ti films on Si substrate and subsequent silicidation/drive-in by rapid thermal annealing (RTA) or conventional furnace annealing (CFA) under proper implant and anneal conditions. For both the RTA and CFA techniques, annealing temperatures higher than 800-degrees-C degrade the junction formation because of more severe dopant confinement within the silicides and more serious diffusion of knock-on Ti into junction regions. The high-dose implant greatly enhanced the dopant activation and thus improved the junctions. The high heating rate for RTA caused an immediate formation of Ti-B compounds at high temperatures, while CFA considerably promoted the drive-in efficiency because of its low heating rates and long annealing times. Hence, CFA yielded better low-bias rectifying characteristics than RTA due to larger dopant activation. However, CFA caused much worse high reverse-bias characteristics. A rapid increase of reverse currents with bias voltage was observed for the CFA-treated samples, indicating a severe Ti penetration due to long annealing times. |
URI: | http://dx.doi.org/10.1063/1.351269 http://hdl.handle.net/11536/3525 |
ISSN: | 0021-8979 |
DOI: | 10.1063/1.351269 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 71 |
Issue: | 3 |
起始页: | 1265 |
结束页: | 1270 |
显示于类别: | Articles |