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dc.contributor.authorTSENG, JDen_US
dc.contributor.authorTZUANG, CKCen_US
dc.date.accessioned2014-12-08T15:05:01Z-
dc.date.available2014-12-08T15:05:01Z-
dc.date.issued1992-01-16en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://hdl.handle.net/11536/3549-
dc.description.abstractThe effect of finite substrate width on the higher-order mode generation of an electrically shielded microstrip is investigated. By employing the full-wave mixed potential mode-matching method the microstrip on a finite-width substrate can be accurately analysed. The dispersion characteristics of microstrip on two different substrate widths were compared in the frequency range of interest. The results indicated that the use of conventional three-dimensional simulators assuming homogeneous layered (stratified) multi-dielectric substrates may not work well above the first cutoff frequency of microstrip on a finite-width substrate.en_US
dc.language.isoen_USen_US
dc.subjectMICROSTRIPen_US
dc.subjectMICROWAVE INTEGRATED CIRCUITSen_US
dc.subjectMICROWAVE DEVICES AND COMPONENTSen_US
dc.titleEFFECT OF FINITE SUBSTRATE WIDTH ON HIGHER-ORDER MODE GENERATION OF ELECTRICALLY SHIELDED SYMMETRICAL MICROSTRIPen_US
dc.typeArticleen_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume28en_US
dc.citation.issue2en_US
dc.citation.spage192en_US
dc.citation.epage193en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電信研究中心zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentCenter for Telecommunications Researchen_US
dc.identifier.wosnumberWOS:A1992HA94600056-
dc.citation.woscount0-
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