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dc.contributor.authorWU, CCen_US
dc.contributor.authorTSAI, JSen_US
dc.contributor.authorLIN, CJen_US
dc.date.accessioned2014-12-08T15:05:04Z-
dc.date.available2014-12-08T15:05:04Z-
dc.date.issued1992-01-01en_US
dc.identifier.issn0921-4526en_US
dc.identifier.urihttp://hdl.handle.net/11536/3593-
dc.description.abstractFree-carrier absorption in degenerate semiconductors such as n-type InSb has been investigated in quantizing magnetic fields at a very low temperature limit. It is assumed that the energy band of electrons in semiconductors is nonparabolic and the dominant scattering mechanism for electrons is the acoustic phonon scattering via the deformation potential coupling. Numerical results show that both real and imaginary parts of the absorption coefficient in degenerate semiconductors oscillate quite considerably with the magnetic field from the lower-field up to a higher-field region and some discontinuous points can be observed there. This is different from the numerical results shown in nondegenerate semiconductors.en_US
dc.language.isoen_USen_US
dc.titleEFFECT OF NONPARABOLICITY ON FREE-CARRIER ABSORPTION IN DEGENERATE N-TYPE INDIUM-ANTIMONIDE IN QUANTIZING MAGNETIC-FIELDSen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICA Ben_US
dc.citation.volume176en_US
dc.citation.issue1-2en_US
dc.citation.spage159en_US
dc.citation.epage164en_US
dc.contributor.department應用數學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Applied Mathematicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1992HB62600018-
dc.citation.woscount1-
Appears in Collections:Articles