完整後設資料紀錄
DC 欄位語言
dc.contributor.authorCHANG, KHen_US
dc.contributor.authorLEE, CPen_US
dc.contributor.authorWU, JSen_US
dc.contributor.authorLIU, DGen_US
dc.contributor.authorLIOU, DCen_US
dc.contributor.authorWANG, MHen_US
dc.contributor.authorCHEN, LJen_US
dc.contributor.authorMARAIS, MAen_US
dc.date.accessioned2014-12-08T15:05:06Z-
dc.date.available2014-12-08T15:05:06Z-
dc.date.issued1991-11-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.349030en_US
dc.identifier.urihttp://hdl.handle.net/11536/3638-
dc.description.abstractThe Al composition of AlGaAs has been determined by four methods: high-resolution transmission electron microscopy (HRTEM), reflection high-energy electron diffraction (RHEED), photoluminescence (PL), and double-crystal x-ray diffraction (DCXRD). HRTEM is direct and the most accurate method because it does not involve any formula or extrapolation. Using the result obtained from HRTEM as a standard, we have calibrated the results from other methods. RHEED intensity oscillation is found to be accurate and reliable, if the growth conditions are correctly chosen. Comparing the PL results with those determined from HRTEM and RHEED, we suggest three formulas to determine the Al contents at different temperatures. We also proposed a polynomial to determine the Al concentration using the DCXRD measurement.en_US
dc.language.isoen_USen_US
dc.titlePRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAASen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.349030en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume70en_US
dc.citation.issue9en_US
dc.citation.spage4877en_US
dc.citation.epage4882en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1991GN97100030-
dc.citation.woscount16-
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