DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES

doi:10.1109/55.119218

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HSU, SL	en_US
dc.contributor.author	LIU, LM	en_US
dc.contributor.author	LIN, MS	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:05:06Z	-
dc.date.available	2014-12-08T15:05:06Z	-
dc.date.issued	1991-11-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.119218	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3648	-
dc.description.abstract	The increase of the "effective" gate oxide thickness for W-polycide processes is studied. The samples with as-deposited and annealed W polycide are analyzed by secondary ion mass spectrometry, transmission electron microscopy (TEM), and high-frequency CV measurements. The TEM cross section shows that the gate oxide thicknesses are approximately 244 and approximately 285 angstrom for as-deposited and 1000-degrees-C annealed samples, respectively. The TEM results agree with that from CV measurements. The TEM analyses provide a direct physical evidence of an additional oxide thickness (approximately 41 angstrom) during the W-polycide annealing.	en_US
dc.language.iso	en_US	en_US
dc.title	DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.119218	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	12	en_US
dc.citation.issue	11	en_US
dc.citation.spage	623	en_US
dc.citation.epage	625	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1991GL47900015	-
dc.citation.woscount	21	-
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