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dc.contributor.authorLin, Chih-Yangen_US
dc.contributor.authorLin, Chun-Chiehen_US
dc.contributor.authorHuang, Chun-Hsingen_US
dc.contributor.authorLin, Chen-Hsien_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2014-12-08T15:05:08Z-
dc.date.available2014-12-08T15:05:08Z-
dc.date.issued2007-12-15en_US
dc.identifier.issn0257-8972en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.surfcoat.2007.07.052en_US
dc.identifier.urihttp://hdl.handle.net/11536/3674-
dc.description.abstractHysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectsol-gelen_US
dc.subjectSrZrO3en_US
dc.subjectnonvolatile memoryen_US
dc.subjectresistive switchingen_US
dc.titleResistive switching properties of sol-gel derived Mo-doped SrZrO3 thin filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.surfcoat.2007.07.052en_US
dc.identifier.journalSURFACE & COATINGS TECHNOLOGYen_US
dc.citation.volume202en_US
dc.citation.issue4-7en_US
dc.citation.spage1319en_US
dc.citation.epage1322en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000251618900129-
Appears in Collections:Conferences Paper


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