Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films

標題:	Resistive switching properties of sol-gel derived Mo-doped SrZrO3 thin films
作者:	Lin, Chih-Yang Lin, Chun-Chieh Huang, Chun-Hsing Lin, Chen-Hsi Tseng, Tseung-Yuen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	sol-gel;SrZrO3;nonvolatile memory;resistive switching
公開日期:	15-Dec-2007
摘要:	Hysteretic I-V characteristics of the SrZrO3 (SZO) thin films with various Mo-doping concentrations were investigated in the study. The 0.2 mol% Mo-doping SZO-based memory device showed excellent resistive switching characteristics, and the resistive switching can be operated over 300 times during successive operation. Both high and low conductive states were stable over 10(4) s. Multi-bit behavior was investigated by dc voltage sweeping with different spans of voltage scan for OFF-process and by various OFF-pulse voltages as well. The endurance test can be over 1000 times with no data loss found. The experimental results showed high potential for nonvolatile memory application. (c) 2007 Published by Elsevier B.V.
URI:	http://dx.doi.org/10.1016/j.surfcoat.2007.07.052 http://hdl.handle.net/11536/3674
ISSN:	0257-8972
DOI:	10.1016/j.surfcoat.2007.07.052
期刊:	SURFACE & COATINGS TECHNOLOGY
Volume:	202
Issue:	4-7
起始頁:	1319
結束頁:	1322
Appears in Collections:	Conferences Paper

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