INSITU GROWTH OF SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS

doi:10.1111/j.1151-2916.1991.tb08302.x

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HAUNG, CJ	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHEN, MC	en_US
dc.contributor.author	TSENG, TY	en_US
dc.date.accessioned	2014-12-08T15:05:10Z	-
dc.date.available	2014-12-08T15:05:10Z	-
dc.date.issued	1991-09-01	en_US
dc.identifier.issn	0002-7820	en_US
dc.identifier.uri	http://dx.doi.org/10.1111/j.1151-2916.1991.tb08302.x	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3699	-
dc.description.abstract	Using single-target on-axis sputter deposition, YBa2Cu3O7-x films, with flatness oriented in the c axis and a zero-resistance temperature (T(co)) of 89 K, were prepared by an in situ growth technique. This work examines the effect of the growth temperature on the properties of in situ films. The experimental results show that high-quality YBa2Cu3O7-x films can be obtained by controlling the substrate temperature in a range from 680-degrees to 690-degrees-C. In addition, a new parallel-circuit model is proposed and a simulation of the resistance versus temperature curve is presented.	en_US
dc.language.iso	en_US	en_US
dc.title	INSITU GROWTH OF SUPERCONDUCTING YBA2CU3O7-X THIN-FILMS	en_US
dc.type	Note	en_US
dc.identifier.doi	10.1111/j.1151-2916.1991.tb08302.x	en_US
dc.identifier.journal	JOURNAL OF THE AMERICAN CERAMIC SOCIETY	en_US
dc.citation.volume	74	en_US
dc.citation.issue	9	en_US
dc.citation.spage	2305	en_US
dc.citation.epage	2308	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1991GF91600044	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文