Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwei, CM | en_US |
dc.contributor.author | Chen, YF | en_US |
dc.contributor.author | Tung, CJ | en_US |
dc.date.accessioned | 2014-12-08T15:01:07Z | - |
dc.date.available | 2014-12-08T15:01:07Z | - |
dc.date.issued | 1998-01-07 | en_US |
dc.identifier.issn | 0022-3727 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1088/0022-3727/31/1/006 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/36 | - |
dc.description.abstract | Monte Carlo calculations to study the influence of solid-state, polarization, exchange and relativistic effects on the angular distribution and the reflection coefficient for electrons elastically reflected from gold surfaces have been performed. Elastic differential cross sections were determined using relativistic Dirac equations with a solid atom potential including the polarization and exchange effects. Inelastic differential inverse mean free paths were computed using the extended Drude dielectric function for volume and surface excitations. These showed that the polarization effect made a contribution to elastic differential cross sections at small scattering angles, whereas, the exchange and relativistic effects contributed to these cross sections at Barge scattering angles. These effects are important to the angular distribution and the elastic reflection coefficient for electron energies below 400 eV, Monte Carlo results calculated in this work are in very good agreement with experimental data. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Elastic reflection of low-energy electrons from polycrystalline gold targets | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1088/0022-3727/31/1/006 | en_US |
dc.identifier.journal | JOURNAL OF PHYSICS D-APPLIED PHYSICS | en_US |
dc.citation.volume | 31 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 36 | en_US |
dc.citation.epage | 42 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000071820600006 | - |
dc.citation.woscount | 4 | - |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.