A REAL-TIME C-V MEASUREMENT CIRCUIT FOR MOS CAPACITORS UNDER CURRENT STRESSING

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DC 欄位	值	語言
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.contributor.author	HO, JH	en_US
dc.contributor.author	WANG, WT	en_US
dc.date.accessioned	2014-12-08T15:05:11Z	-
dc.date.available	2014-12-08T15:05:11Z	-
dc.date.issued	1991-08-01	en_US
dc.identifier.issn	0018-9456	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/19.85352	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3723	-
dc.description.abstract	A dynamic large signal C-V measurement circuit is presented to measure real time C-V characteristics of a MOS structure under current stressing conditions. The real time information on the generation and filling of traps and surface states can thus be obtained. With this circuit it has been shown that, for an Al-gate MOS structure, charges on traps and interface surface states recover immediately after the stressing is removed.	en_US
dc.language.iso	en_US	en_US
dc.title	A REAL-TIME C-V MEASUREMENT CIRCUIT FOR MOS CAPACITORS UNDER CURRENT STRESSING	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/19.85352	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT	en_US
dc.citation.volume	40	en_US
dc.citation.issue	4	en_US
dc.citation.spage	775	en_US
dc.citation.epage	777	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1991GB24600021	-
dc.citation.woscount	0	-
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