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dc.contributor.authorYang, F. M.en_US
dc.contributor.authorChang, T. C.en_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorYeh, Y. H.en_US
dc.contributor.authorYu, Y. C.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorSze, S. M.en_US
dc.contributor.authorLou, J. C.en_US
dc.date.accessioned2014-12-08T15:05:12Z-
dc.date.available2014-12-08T15:05:12Z-
dc.date.issued2007-12-03en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2007.06.131en_US
dc.identifier.urihttp://hdl.handle.net/11536/3741-
dc.description.abstractIn this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry. (C) 2007 Published by Elsevier B.V.en_US
dc.language.isoen_USen_US
dc.subjectnonvolatile memoryen_US
dc.subjectnanocrystalsen_US
dc.subjectHfO2en_US
dc.titleNickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory applicationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2007.06.131en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume516en_US
dc.citation.issue2-4en_US
dc.citation.spage360en_US
dc.citation.epage363en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000252037500048-
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