EXCITON BINDING-ENERGY AND SUBBAND STRUCTURES OF GAAS/ALXGA1-XAS SUPERLATTICES

Abstract

The subband structure and the binding energy of an exciton in the GaAs/Al(x)Ga(1-x)As superlattice are studied by a simple approximation method. Both the exciton binding energy and the subband energy are expressed as a function of well width, barrier width, and Al composition. The influence of the effective-mass mismatch is taken into account. The energy spacings between interband or intersubband transitions are calculated and compared with the observed data. Good agreement is obtained.