統計資料
總造訪次數
| 檢視 | |
|---|---|
| THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION | 117 |
本月總瀏覽
| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
|---|---|---|---|---|---|---|---|
| THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION | 0 | 1 | 0 | 0 | 0 | 1 | 1 |
檔案下載
| 檢視 | |
|---|---|
| A1991FV28800003.pdf | 5 |
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 100 |
| 美國 | 13 |
| 印度 | 1 |
| 俄羅斯聯邦 | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 94 |
| Menlo Park | 8 |
| Beijing | 5 |
| Kensington | 3 |
| Buffalo | 1 |
| Fayetteville | 1 |
| Moscow | 1 |
| Nanning | 1 |