LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANES

Full metadata record

DC Field	Value	Language
dc.contributor.author	CHIU, HT	en_US
dc.contributor.author	WU, PF	en_US
dc.date.accessioned	2014-12-08T15:05:14Z	-
dc.date.available	2014-12-08T15:05:14Z	-
dc.date.issued	1991-06-01	en_US
dc.identifier.issn	0009-4536	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3777	-
dc.description.abstract	(Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline beta-SiC thin films on silicon substrates at 1000-1200-degrees-C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.	en_US
dc.language.iso	en_US	en_US
dc.subject	LOW-PRESSURE CHEMICAL VAPOR DEPOSITION	en_US
dc.subject	ORGANOPOLYSILANES	en_US
dc.subject	SILICON CARBIDE THIN FILMS	en_US
dc.title	LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANES	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE CHINESE CHEMICAL SOCIETY	en_US
dc.citation.volume	38	en_US
dc.citation.issue	3	en_US
dc.citation.spage	231	en_US
dc.citation.epage	234	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:A1991FR18000004	-
dc.citation.woscount	5	-
Appears in Collections:	Articles