標題: | DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM 1,1-DIMETHYL-1-SILACYCLOBUTANE |
作者: | CHIU, HT LEE, SF 交大名義發表 應用化學系 National Chiao Tung University Department of Applied Chemistry |
關鍵字: | LOW-PRESSURE CHEMICAL VAPOR DEPOSITION;1,1-DIMETHYL-1-SILACYCLOBUTANE;SILICON CARBIDE THIN FILMS |
公開日期: | 1-八月-1992 |
摘要: | 1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline beta-SiC thin films were grown at temperatures 1100 and 1200-degrees-C. At temperatures between 950 and 1100-degrees-C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED). |
URI: | http://hdl.handle.net/11536/3328 |
ISSN: | 0009-4536 |
期刊: | JOURNAL OF THE CHINESE CHEMICAL SOCIETY |
Volume: | 39 |
Issue: | 4 |
起始頁: | 293 |
結束頁: | 297 |
顯示於類別: | 期刊論文 |