標題: DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM 1,1-DIMETHYL-1-SILACYCLOBUTANE
作者: CHIU, HT
LEE, SF
交大名義發表
應用化學系
National Chiao Tung University
Department of Applied Chemistry
關鍵字: LOW-PRESSURE CHEMICAL VAPOR DEPOSITION;1,1-DIMETHYL-1-SILACYCLOBUTANE;SILICON CARBIDE THIN FILMS
公開日期: 1-Aug-1992
摘要: 1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline beta-SiC thin films were grown at temperatures 1100 and 1200-degrees-C. At temperatures between 950 and 1100-degrees-C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).
URI: http://hdl.handle.net/11536/3328
ISSN: 0009-4536
期刊: JOURNAL OF THE CHINESE CHEMICAL SOCIETY
Volume: 39
Issue: 4
起始頁: 293
結束頁: 297
Appears in Collections:Articles