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完整後設資料紀錄
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dc.contributor.authorChang, Li-Chunen_US
dc.contributor.authorLee, Dai-Yingen_US
dc.contributor.authorHo, Chia-Chengen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.date.accessioned2014-12-08T15:05:15Z-
dc.date.available2014-12-08T15:05:15Z-
dc.date.issued2007-12-03en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2007.07.009en_US
dc.identifier.urihttp://hdl.handle.net/11536/3785-
dc.description.abstractCaCu3Ti4O12 (CCTO) thin films with various thicknesses were prepared by a sol-gel multiple coating processes on Pt/Ti/SiO2/Si substrates. Microstructures and surface morphologies of CCTO thin films were analyzed by grazing incident X-ray diffractometer (GIXRD) and scanning electron microscope (SEM), respectively. The correlation between the thickness and electrical properties of CCTO films was investigated. The dielectric constants of CCTO films decreased with increasing film thickness (coating cycle). Both the dielectric constant of CCTO films and interlayer are calculated. Possible mechanisms are explored to explain the thickness dependence of the dielectric constant of CCTO films. (C) 2007 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectsol-gelen_US
dc.subjectCaCu3Ti4O12 (CCTO)en_US
dc.subjectthickness-dependent propertiesen_US
dc.subjectdielectricen_US
dc.titleThickness-dependent microstructures and electrical properties of CaCu3Ti4O12 films derived from sol-gel processen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2007.07.009en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume516en_US
dc.citation.issue2-4en_US
dc.citation.spage454en_US
dc.citation.epage459en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInnovative Packaging Research Centerzh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInnovative Packaging Research Centeren_US
dc.identifier.wosnumberWOS:000252037500066-
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