寬通道側向電流效應之研究與新穎薄膜電晶體結構之開發

Abstract

這篇論文中,第一次討論到寬通道薄膜電晶體的飽和電流和寬通道調變在線性變化區的關係.我們發現當通道寬度大於汲極源極寬度時,寬通道測向電流效應將產生.這個效應將在較寬的通道產生新的電流路徑和較低的總電阻使的飽和電流上升. 當通道的寬度漸漸增加時,飽和電流一開始會跟著通道的寬度增加而增加.然後到達某個定值後就跟通道的寬度增加無關.當通道的寬度大於有效的通道寬度時,飽和電流增加到最大值時.最大的飽和電流和通道長度汲極源極寬度有某種關係.我們發現飽和電流的增加比率和通道長度除以汲極源極寬度的值成正比隨著通道寬度的增加而增加.

In this paper, it is first time to discuss the ON-state drain current of a special TFT structure with a wider channel width and a narrower source/drain width in the linear region. We found that, when the channel width is wider than that of the source/drain, the side channel current effect (SCCE) would be generated, and this effect would cause the increase of the ON-state drain current due to the additional current flow paths existed in the side channel regions and lower channel resistance. As the side channel width increasing, the ON-state drain current would be initially increased and then gradually independent of the side channel width when the side channel width is larger than the effective side channel. The maximum ON-state drain current will apply to channel length and source/drain width. We also found that the ON-state drain current gain would be directly proportional to the channel length and the channel length to source/drain width ratio, and dependent on the side channel width.