溝渠式橫向金氧半場效電晶體分析與最佳化設計之研究

Abstract

隨著半導體產業的興起，高功率元件經常被應用在許多電力電子方面。功率金氧半場效電晶體是功率元件其中一種，分別為橫向式與垂直式的結構。功率元件為了與平面製程整合，必須設計成橫向式的結構，這就是橫向式金氧半場效電晶體，它的特性是高的崩潰電壓與高的導通電阻。在本論文中，我們選擇溝渠式橫向金氧半場效電晶體和使用模擬工具如ISE TCAD和MINITAB以減少面積和導通電阻，以期待設計出150V的功率元件，並比較溝渠式橫向金氧半場效電晶體和橫向金氧半場效電晶體間的效能。 最後，我們以電腦模擬得到在不同的情況下設定的崩潰電壓(300V)與導通電阻，並且運用田口方法得到最佳化的設計。

Power devices are widely applied to power electronics owing to great semiconductor industry. Power MOSFET is one kind of power devices, which has lateral and vertical structures. In order to integrate power MOSFET with planar IC process, this device must be designed the lateral structure, which is LDMOSFET. The characteristics of LDMOSFET are high breakdown voltage and high on-resistance. In this thesis, we choose Trench LDMOSFET and use simulation tools like ISE TCAD and MINITAB to reduce area and on-resistance, and look forward to design of 150V power device, and compare efficiency with LDMOSFET. Finally, we use computer simulation to obtain the detail of breakdown voltage (300V) and on-resistance under different situations, and apply Taguchi Methods to gain optimal design.