标题: | 闸极直接穿隧及边缘直接穿隧实验施于有纵向及横向应力N-型通道金氧半场效电晶体 Gate Direct Tunneling and Edge Direct Tunneling Experiment in n-MOSFETs under Longitudinal and Transverse Stress |
作者: | 梁惕华 Liang Ti-Hua 陈明哲 Ming-Jer Chen 电子研究所 |
关键字: | 应变矽;Strained Silicon |
公开日期: | 2007 |
摘要: | 本文研究电子自一个闸极氧化层厚度1.1奈米之N-型通道金氧半场效电晶体,因为电路布局而产生横向及纵向应力之下之穿隧效应。藉由三角位能井模拟器 (TRP Simulator),并由已刊出文献取得重要的应力物理参数,可将实验测得之穿隧效应电流和对应闸极电压之间萃取出横向及纵向应力。为了检验上述方法之精确度,元件的载子迁移率被同时量测,并依此萃取得到和前述方法相一致之应力。接着,本文将不同应力下之源极、汲极电阻值的变化,与扩散系数做联结,得到单位应变之活化能。 为了再证实本文之萃取方法之可靠度,藉由些微修正三角位能井模拟器,可以模拟由闸极穿隧至源极及汲极之边缘电流 (EDT),并可以藉此萃取出闸极与源极或汲极间之叠合处长度,观察到□杂载子扩散迟延的效应。最后,单位应变之活化能再次被萃取,并和先前的萃取数值吻合,再次验证了本文方法之可靠度。一个以物理为导向之可解析模拟器也在此被提出。 This thesis investigates the conduction-band electron direct tunneling current through the 1.1 nm gate oxide of n-MOSFETs transistors that undergo transverse and longitudinal stress via a layout technique. By means of the triangular potential based quantum simulator (TRP), with known process parameters and published deformation potential constants as input, fitting of measured direct tunneling current versus gate voltage leads to the quantity of the channel stress. To examine the accuracy of the method, a link with the mobility measurement on the same device is conducted. The extracted stress is in good agreement with that of the direct tunneling, and therefore the experimental data are further utilized to extract the source/drain series resistance. Relating this external resistance to the dopant diffusivity under various stress conditions can lead to the activation energy per strain. To reconfirm the validity of the above approach, the TRP simulator is again modified to deal with the edge direct tunneling counterpart. The resulting measurement data in the accumulation region furnishes the quantified gate-to-source/drain-extension overlap length. A retarded dopant diffusion phenomenon is straightforwardly observed. The corresponding strain-induced activation energy is then determined and is shown to be in good agreement with the extracted value obtained earlier. A physically oriented analytical model is therefore reached concerning the strain altered dopant diffusion. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009511514 http://hdl.handle.net/11536/38056 |
显示于类别: | Thesis |
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