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dc.contributor.authorLO, SHen_US
dc.contributor.authorLEE, CPen_US
dc.date.accessioned2014-12-08T15:05:16Z-
dc.date.available2014-12-08T15:05:16Z-
dc.date.issued1991-04-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/11536/3817-
dc.description.abstractA two-dimensional numerical analysis of the drain-current transient behavior of ion-implantation GaAs MESFETs on undoped semi-insulating substrates is presented. It is found that the EL2 traps with slow transient behaviors play an important role in the drain lag effects. Also, the current overshoot and undershoot can be explained by the capture and the emission of electrons through the EL2 traps, respectively.en_US
dc.language.isoen_USen_US
dc.title2-DIMENSIONAL SIMULATION OF THE DRAIN-CURRENT TRANSIENT EFFECT IN GAAS-MESFETSen_US
dc.typeArticleen_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume34en_US
dc.citation.issue4en_US
dc.citation.spage397en_US
dc.citation.epage401en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1991FD59600010-
dc.citation.woscount11-
Appears in Collections:Articles