2-DIMENSIONAL SIMULATION OF THE DRAIN-CURRENT TRANSIENT EFFECT IN GAAS-MESFETS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LO, SH	en_US
dc.contributor.author	LEE, CP	en_US
dc.date.accessioned	2014-12-08T15:05:16Z	-
dc.date.available	2014-12-08T15:05:16Z	-
dc.date.issued	1991-04-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3817	-
dc.description.abstract	A two-dimensional numerical analysis of the drain-current transient behavior of ion-implantation GaAs MESFETs on undoped semi-insulating substrates is presented. It is found that the EL2 traps with slow transient behaviors play an important role in the drain lag effects. Also, the current overshoot and undershoot can be explained by the capture and the emission of electrons through the EL2 traps, respectively.	en_US
dc.language.iso	en_US	en_US
dc.title	2-DIMENSIONAL SIMULATION OF THE DRAIN-CURRENT TRANSIENT EFFECT IN GAAS-MESFETS	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	4	en_US
dc.citation.spage	397	en_US
dc.citation.epage	401	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1991FD59600010	-
dc.citation.woscount	11	-
顯示於類別：	期刊論文