應用於X頻帶EER發射器之互補金氧半E類功率放大器設計

Abstract

本文提出了第一個操作在X頻帶並且完全整合在單一晶片上的CMOS E類功率放大器。此E類功率放大器使用了0.18-μm CMOS製程並且利用了注射式鎖定之技巧以達到X頻帶的操作。量测結果顯示此E類放大器操作在8.41GHz時，可達到10.75dBm的輸出功率和17%的功率增加效率，以及20dB之增益。在設計的頻帶內，8.35GHz~8.45GHz，功率增加效率仍然可以維持在14%以上。且為了增加上述電路於EER發射器中調變的準確度。本文提出了一個補償AM/PM 失真之技巧以達到 IEEE 802.11a 寬頻OFDM 資料流傳送之線性度與頻寬規格。模擬結果顯示，在訊號頻寬20MHz，以及64-QAM調變，且應用補償技術的情況下。本文所提出的E類功率放大器在中心頻率為8.4GHZ時可以-25.2dB之EVM達到 IEEE802.11a之線性度規格要求並且同時傳送9dBm之平均輸出功率與15%之功率增加效率。

A first X-Band fully integrated Class-E power amplifier is proposed in this thesis and fabricated in 0.18-□m CMOS technology. Injection locking technique is applied to help the reach of the X-Band operation. Measurement results show that the proposed Class-E power amplifier could achieve 17% power added efficiency (PAE) and delivering an output power of 10.75dBm with gain 20dB at 8.41 GHz. Also, the PAE is over 14% over the frequency range 8.35 GHz to 8.45 GHz. In order to improve the modulation accuracy of the proposed circuit under the EER transmitter, a compensation technique for AM/PM distortion is proposed to achieve the linearity requirements of IEEE 802.11a data stream broadband OFDM transmission. Simulation results show that with compensation technique, 20MHz signal bandwidth and 64-QAM modulation, the proposed Class-E power amplifier meet the linearity specification of IEEE 802.11a by achieving -25.2dB EVM while delivering 9 dBm averaging output power and 15% PAE at 8.4 GHz center frequency.